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STB12NM50ND STD12NM50ND, STF12NM50ND
N-channel 500 V, 0.29 , 11 A, FDmeshTM II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP
Features
Type STB12NM50ND STD12NM50ND STF12NM50ND

VDSS (@Tjmax) RDS(on) max 550 V 550 V 550 V 0.38 0.38 0.38
ID 11 A 11 A 11 A
3
3 1
3 1 2
100% avalanche tested Low input capacitance and gate charge Low gate input resistance
1
D2PAK
DPAK
TO-220FP
Application
Switching applications Figure 1. Internal schematic diagram
Description
FDmeshTM technology combines the MDmeshTM features with an intrinsic fast-recovery body diode. The resulting product has reduced onresistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required.
Table 1.
Device summary
Marking 12NM50ND 12NM50ND 12NM50ND Package D2PAK DPAK TO-220FP Packaging Tape and reel Tape and reel Tube
Order codes STB12NM50ND STD12NM50ND STF12NM50ND
June 2009
Doc ID 14936 Rev 2
1/16
www.st.com 16
Contents
STB12NM50ND, STD12NM50ND, STF12NM50ND
Contents
1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 4 5 6
Test circuits
.............................................. 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
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STB12NM50ND, STD12NM50ND, STF12NM50ND
Electrical ratings
1
Electrical ratings
Table 2.
Symbol VDS VGS ID ID IDM
(2)
Absolute maximum ratings
Value Parameter DPAK Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Peak diode recovery voltage slope Storage temperature Operating junction temperature 40 -55 to 150 150 11 6.9 44 100 DPAK 500 25 11 (1) 6.9 44
(1) (1)
Unit TO-220FP V V A A A W V V/ns C C
PTOT VISO dv/dt (3) Tstg Tj
25 2500
1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 11 A, di/dt 600 A/s, VDD = 80% V(BR)DSS
Table 3.
Symbol
Thermal data
Value Parameter DPAK DPAK 1.25 30 50 62.5 300 TO-220FP 5 C/W C/W C/W C Unit
Rthj-case Thermal resistance junction-case max Rthj-pcb Thermal resistance junction-pcb max
Rthj-amb Thermal resistance junction-amb max Tl Maximum lead temperature for soldering purposes
Table 4.
Symbol IAS EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) Single pulse avalanche energy (starting Tj = 25 C, ID = IAS, VDD = 50 V) Max value 5 350 Unit A mJ
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Electrical characteristics
STB12NM50ND, STD12NM50ND, STF12NM50ND
2
Electrical characteristics
(TCASE = 25 C unless otherwise specified) Table 5.
Symbol V(BR)DSS dv/dt(1) IDSS IGSS VGS(th) RDS(on)
On/off states
Parameter Drain-source breakdown voltage Drain-source voltage slope Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDD = 400 V,ID = 11 A, VGS = 10 V VDS = Max rating, VDS = Max rating,@125 C VGS = 20 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 5.5 A 3 4 0.29 Min. 500 44 1 100 100 5 0.38 Typ. Max. Unit V V/ns A A nA V
1. Value measured at turn off under inductive load
Table 6.
Symbol gfs(1) Ciss Coss Crss Coss eq.(2)
Dynamic
Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Gate input resistance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =15 V, ID= 5.5 A VDS = 50 V, f =1 MHz, VGS = 0 Min. Typ. 8 850 48 5 100 Max. Unit S pF pF pF pF
-
-
VGS = 0, VDS = 0 to 400 V f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain VDD = 400 V, ID = 11 A VGS = 10 V Figure 19
-
-
Rg Qg Qgs Qgd
1.
-
4.5 30 6 17
-
nC nC nC
-
-
Pulsed: pulse duration = 300 s, duty cycle 1.5%
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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STB12NM50ND, STD12NM50ND, STF12NM50ND
Electrical characteristics
Table 7.
Symbol td(on) tr td(off) tf
Switching times
Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 250 V, ID = 5.5 A, RG = 4.7 , VGS = 10 V Figure 18 Min. Typ. 12 15 40 17 Max. Unit ns ns ns ns
-
-
Table 8.
Symbol ISD ISDM (1) VSD(2) trr Qrr IRRM trr Qrr IRRM
2.
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 11 A, VGS=0 ISD = 11 A, di/dt =100 A/s, VDD = 100 V Figure 20 VDD = 100 V di/dt =100 A/s, ISD = 11 A Tj = 150 C, Figure 20 Test conditions Min. Typ. Max. Unit 122 650 11 160 940 12 11 44 1.6 A A V ns nC A ns nC A
-
1. Pulse width limited by safe operating area Pulsed: pulse duration = 300 s, duty cycle 1.5%
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Electrical characteristics
STB12NM50ND, STD12NM50ND, STF12NM50ND
2.1
Figure 2.
ID (A)
Electrical characteristics (curves)
Safe operating area for DPAK
AM03984v1
Figure 3.
Thermal impedance for DPAK
100
is Op Lim era ite tion d by in th m is ax ar Re
DS (o
10s 100s
a
10
n)
1ms Tj=150C Tc=25C Sinlge pulse 10ms
1
0.1 0.1
1
10
100
VDS(V)
Figure 4.
ID (A)
Safe operating area for TO-220FP
AM03986v1
Figure 5.
Thermal impedance for TO-220FP
10
1
is ea ) ar S(on is th RD in ax on y m ti b ra pe ed O mit Li
10s 100s 1ms 10ms
0.1
Tj=150C Tc=25C Sinlge pulse 1 10 100 VDS(V)
0.01 0.1
Figure 6.
ID (A)
Safe operating area for DPAK
AM03985v1
Figure 7.
Thermal impedance for DPAK
100
a is Op Lim era ite tion d by in th m is ax ar Re
DS ( on )
10s 100s
10
1ms Tj=150C Tc=25C Sinlge pulse 10ms
1
0.1 0.1
1
10
100
VDS(V)
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STB12NM50ND, STD12NM50ND, STF12NM50ND Figure 8.
ID (A) VGS=10V 20 20
Electrical characteristics Figure 9. Transfer characteristics
AM03988v1
Output characteristics
AM03987v1
ID (A)
VDS=20V 15 15 7V 10 6V
10
5
5
0 0
5V 5 10 15 20 25 25 VDS(V)
0 0
2
4
6
8
10 VGS(V)
Figure 10. Transconductance
GFS (S) 8.5 TJ=25C
AM03989v1
Figure 11. Static drain-source on resistance
RDS(on) () 0.35 0.33
AM03990v1
TJ=-50C
6.5 TJ=150C 4.5 0.29 2.5 0.27 0.25 0 0.31
0.5 0 5 10 15 20 25
ID(A)
2
4
6
8
10
ID(A)
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
VGS (V) VDS 10 8 6 4
AM03991v1
VGS VDD=400V ID=11A 400 350 300 250 200 150 100
C (pF)
AM03992v1
1000
Ciss
100 Coss 10 Crss
2 0 0 5 10 15 20 25 30
50 0 Qg(nC) 1 0.1 1 10 100 VDS(V)
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Electrical characteristics Figure 14. Normalized gate threshold voltage vs temperature
VGS(th) (norm) 1.10
AM03993v1
STB12NM50ND, STD12NM50ND, STF12NM50ND Figure 15. Normalized on resistance vs temperature
RDS(on) (norm) 2.0 1.9
AM03394v1
1.00
1.7 1.5
0.90
1.3 1.1
0.80
0.9 0.7
0.70 -50
-25
0
25
50
75 100
TJ(C)
0.5 -50 -25
0
25
50
75
100
TJ(C)
Figure 16. Source-drain diode forward characteristics
VSD (V) 1.2 1.0 0.8 0.6 TJ=25C 0.4 0.2 0 0 10 20 30 40 50 ISD(A) TJ=150C
AM03996v1
Figure 17. Normalized BVDSS vs temperature
BVDSS (norm) 1.07 1.05 1.03 1.01 0.99 0.97 0.95 0.93 -50 -25 0 25 50 75 100 TJ(C)
AM03995v1
TJ=-50C
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STB12NM50ND, STD12NM50ND, STF12NM50ND
Test circuits
3
Test circuits
Figure 19. Gate charge test circuit
VDD 12V
2200
Figure 18. Switching times test circuit for resistive load
47k 100nF
1k
RL VGS VD RG PW D.U.T.
F
3.3 F
VDD Vi=20V=VGMAX
2200 F
IG=CONST 100 2.7k 47k PW 1k
AM01469v1
D.U.T. VG
AM01468v1
Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit
A D G S B 25 D.U.T.
A FAST DIODE B
A L=100H B D G 3.3 F 1000 F
L
VD
2200 F
3.3 F
VDD
VDD
ID
RG
S
Vi
D.U.T.
Pw
AM01470v1 AM01471v1
Figure 22. Unclamped inductive waveform
V(BR)DSS VD
Figure 23. Switching time waveform
ton tdon tr toff tdoff tf
90% IDM
90% 10%
ID VDD VDD
0
10%
VDS 90%
VGS
AM01472v1
0
10%
AM01473v1
Doc ID 14936 Rev 2
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Package mechanical data
STB12NM50ND, STD12NM50ND, STF12NM50ND
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark.
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STB12NM50ND, STD12NM50ND, STF12NM50ND
Package mechanical data
TO-252 (DPAK) mechanical data
DIM. A A1 A2 b b4 c c2 D D1 E E1 e e1 H L L1 L2 L4 R V2 0o 0.60 0.20 8o 4.40 9.35 1 2.80 0.80 1 6.40 4. 70 2.28 4.60 10.10 mm. min. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 5.10 6.60 ty p ma x . 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20
0068772_G
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Package mechanical data
STB12NM50ND, STD12NM50ND, STF12NM50ND
D2PAK (TO-263) mechanical data
Dim A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2
mm Min 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 2.54 4.88 15 2.49 2.29 1.27 1.30 0.4 0 8 0 5.28 15.85 2.69 2.79 1.40 1.75 0.192 0.590 0.099 0.090 0.05 0.051 Typ Max 4.60 0.23 0.93 1.70 0.60 1.36 9.35 10.40 Min 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334
in c h Typ Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.409 0.1 0.208 0.624 0.106 0.110 0.055 0.069 0.016 8
0079457_M
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STB12NM50ND, STD12NM50ND, STF12NM50ND
Packaging mechanical data
5
Packaging mechanical data
D2PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956
BASE QTY 1000
* on sales type
Doc ID 14936 Rev 2
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Packaging mechanical data
STB12NM50ND, STD12NM50ND, STF12NM50ND
DPAK FOOTPRINT
All dimensions are in millimeters
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R
W
BASE QTY 2500
mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40
15.7 16.3
inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574
0.618 0.641
MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1
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STB12NM50ND, STD12NM50ND, STF12NM50ND
Revision history
6
Revision history
Table 9.
Date 23-Sep-2008 10-Jun-2009
Document revision history
Revision 1 2 First release Added new package, mechanical data: TO-220FP Changes
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STB12NM50ND, STD12NM50ND, STF12NM50ND
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